Huixin-Single FETs, MOSFETs-H12N65IK
- Huixin
Drain to Source Voltage;650V/Gate Charge(Qg);19nC@10V/Number;1 N-channel/Pd - Power Dissipation;106W/RDS(on);278mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.8pF/Current - Continuous Drain(Id);12.3A/Ciss-Input Capacitance;870pF/Output Capacitance(Coss);54pF650V 278mΩ@10V... Read more
$4.50 Excl. VAT
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