Huixin-Single FETs, MOSFETs-H15N65D

Description

Drain to Source Voltage;650V/Gate Charge(Qg);24.7nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;131W/RDS(on);220mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.2pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;1.21nF/Output Capacitance(Coss);74pF


650V 220mΩ@10V 1 N-channel 131W TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);24.7nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;131W/RDS(on);220mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.2pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input... Read more

$3.93 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);24.7nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;131W/RDS(on);220mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.2pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;1.21nF/Output Capacitance(Coss);74pF


    650V 220mΩ@10V 1 N-channel 131W TO-252 Single FETs, MOSFETs RoHS

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