Huixin-Single FETs, MOSFETs-H3N80D
- Huixin
Drain to Source Voltage;800V/Gate Charge(Qg);16nC@400V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;75W/RDS(on);3.8Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));4V800V 3.8Ω@10V 1 N-channel... Read more
$1.32 Excl. VAT
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