Huixin-Single FETs, MOSFETs-H3N80D

Description

Drain to Source Voltage;800V/Gate Charge(Qg);16nC@400V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;75W/RDS(on);3.8Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));4V


800V 3.8Ω@10V 1 N-channel 75W TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;800V/Gate Charge(Qg);16nC@400V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;75W/RDS(on);3.8Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));4V800V 3.8Ω@10V 1 N-channel... Read more

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    Description

    Drain to Source Voltage;800V/Gate Charge(Qg);16nC@400V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;75W/RDS(on);3.8Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));4V


    800V 3.8Ω@10V 1 N-channel 75W TO-252 Single FETs, MOSFETs RoHS

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