Huixin-Single FETs, MOSFETs-H7N65D
- Huixin
Drain to Source Voltage;650V/Gate Charge(Qg);11nC@10V/Number;1 N-channel/Pd - Power Dissipation;40W/RDS(on);1.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.3pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more
$1.26 Excl. VAT
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