Huixin-Single, Pre-Biased Bipolar Transistors-MUN2232

Description

Number;1 NPN (Pre-Biased)/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;246mW/type;NPN/Current - Collector Cutoff;100nA/Emitter-Base Voltage VEBO;6V/Output Voltage(VO(on));200mV/Input Resistor;4.7kΩ/Resistor Ratio;1/Vce Saturation(VCE(sat));250mV/DC Current Gain;30


30 100mA 1 NPN (Pre-Biased) 246mW 50V SOT-23 Single, Pre-Biased Bipolar Transistors RoHS

Product form

Number;1 NPN (Pre-Biased)/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;246mW/type;NPN/Current - Collector Cutoff;100nA/Emitter-Base Voltage VEBO;6V/Output Voltage(VO(on));200mV/Input Resistor;4.7kΩ/Resistor Ratio;1/Vce... Read more

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    Description

    Number;1 NPN (Pre-Biased)/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;246mW/type;NPN/Current - Collector Cutoff;100nA/Emitter-Base Voltage VEBO;6V/Output Voltage(VO(on));200mV/Input Resistor;4.7kΩ/Resistor Ratio;1/Vce Saturation(VCE(sat));250mV/DC Current Gain;30


    30 100mA 1 NPN (Pre-Biased) 246mW 50V SOT-23 Single, Pre-Biased Bipolar Transistors RoHS

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