HXY MOSFET-Single Bipolar Transistors-BD238

Description

type;PNP/Number;1 PNP/Collector - Emitter Voltage VCEO;100V/Current - Collector(Ic);1.5A/Pd - Power Dissipation;1W/Operating Temperature;-55℃~+150℃/DC Current Gain;250/Transition frequency(fT);50MHz/Current - Collector Cutoff;100nA/Vce Saturation(VCE(sat));500mV/Emitter-Base Voltage(Vebo);6V


250 1 PNP PNP 1W 1.5A 100V TO-126 Single Bipolar Transistors RoHS

Product form

type;PNP/Number;1 PNP/Collector - Emitter Voltage VCEO;100V/Current - Collector(Ic);1.5A/Pd - Power Dissipation;1W/Operating Temperature;-55℃~+150℃/DC Current Gain;250/Transition frequency(fT);50MHz/Current - Collector Cutoff;100nA/Vce Saturation(VCE(sat));500mV/Emitter-Base Voltage(Vebo);6V250... Read more

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    Description

    type;PNP/Number;1 PNP/Collector - Emitter Voltage VCEO;100V/Current - Collector(Ic);1.5A/Pd - Power Dissipation;1W/Operating Temperature;-55℃~+150℃/DC Current Gain;250/Transition frequency(fT);50MHz/Current - Collector Cutoff;100nA/Vce Saturation(VCE(sat));500mV/Emitter-Base Voltage(Vebo);6V


    250 1 PNP PNP 1W 1.5A 100V TO-126 Single Bipolar Transistors RoHS

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