HXY MOSFET-Single FETs, MOSFETs-20N50

Description

Drain to Source Voltage;500V/Gate Charge(Qg);63nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;165W/RDS(on);300mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.864nF/Output Capacitance(Coss);286pF


N-Channel 500V 20A 165W Through Hole TO-220F

Product form

Drain to Source Voltage;500V/Gate Charge(Qg);63nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;165W/RDS(on);300mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;500V/Gate Charge(Qg);63nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;165W/RDS(on);300mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.864nF/Output Capacitance(Coss);286pF


    N-Channel 500V 20A 165W Through Hole TO-220F

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