HXY MOSFET-Single FETs, MOSFETs-2N65

Description

Drain to Source Voltage;650V/Gate Charge(Qg);9.5nC/Number;1 N-channel/Pd - Power Dissipation;35W/RDS(on);5Ω@10V/Operating Temperature -;-45℃~+125℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;335pF


650V 5Ω@10V 1 N-channel 35W TO-252-2L Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);9.5nC/Number;1 N-channel/Pd - Power Dissipation;35W/RDS(on);5Ω@10V/Operating Temperature -;-45℃~+125℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);9.5nC/Number;1 N-channel/Pd - Power Dissipation;35W/RDS(on);5Ω@10V/Operating Temperature -;-45℃~+125℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;335pF


    650V 5Ω@10V 1 N-channel 35W TO-252-2L Single FETs, MOSFETs RoHS

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