HXY MOSFET-Single FETs, MOSFETs-2N7002KDW

Description

Drain to Source Voltage;60V/Number;2 N-Channel/Pd - Power Dissipation;150mW/RDS(on);3Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);115mA/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;50pF


60V 3Ω@10V 2 N-Channel 150mW SOT-363 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Number;2 N-Channel/Pd - Power Dissipation;150mW/RDS(on);3Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);115mA/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;50pF60V... Read more

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    Description

    Drain to Source Voltage;60V/Number;2 N-Channel/Pd - Power Dissipation;150mW/RDS(on);3Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);115mA/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;50pF


    60V 3Ω@10V 2 N-Channel 150mW SOT-363 Single FETs, MOSFETs RoHS

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