HXY MOSFET-Single FETs, MOSFETs-AO4438
- HXY MOSFET
Drain to Source Voltage;60V/Gate Charge(Qg);48nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.64W/RDS(on);15.5mΩ@10V;18mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);120pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more
$5.79 Excl. VAT
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