HXY MOSFET-Single FETs, MOSFETs-E3M0060065D-HXY

Description

Drain to Source Voltage;650V/Gate Charge(Qg);46nC/Pd - Power Dissipation;150W/RDS(on);79mΩ/Operating Temperature -;-40℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);29A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input Capacitance;1.02nF/Output Capacitance(Coss);80pF


650V 79mΩ 150W TO-247 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);46nC/Pd - Power Dissipation;150W/RDS(on);79mΩ/Operating Temperature -;-40℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);29A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input Capacitance;1.02nF/Output... Read more

$15.63 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);46nC/Pd - Power Dissipation;150W/RDS(on);79mΩ/Operating Temperature -;-40℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);29A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input Capacitance;1.02nF/Output Capacitance(Coss);80pF


    650V 79mΩ 150W TO-247 Single FETs, MOSFETs RoHS

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