HXY MOSFET-Single FETs, MOSFETs-HFDMS86101
- HXY MOSFET
Drain to Source Voltage;100V/Gate Charge(Qg);39.4nC/Number;1 N-channel/Pd - Power Dissipation;97W/RDS(on);7.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.04pF/Current - Continuous Drain(Id);75A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more
$2.61 Excl. VAT
-
Guaranteed secure & safe checkout.