HXY MOSFET-Single FETs, MOSFETs-HKMB3D5N40SA

Description

Drain to Source Voltage;40V/Gate Charge(Qg);5.8nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.56W/RDS(on);52mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;340pF


N-Channel 40V 5A 1.56W Surface Mount SOT-23

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);5.8nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.56W/RDS(on);52mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);5.8nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.56W/RDS(on);52mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;340pF


    N-Channel 40V 5A 1.56W Surface Mount SOT-23

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