HXY MOSFET-Single FETs, MOSFETs-HSTD10P6F6

Description

Drain to Source Voltage;60V/Gate Charge(Qg);12.1nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;31.3W/RDS(on);140mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.137nF/Output Capacitance(Coss);76pF


P-Channel 60V 10A 31.3W TO-252-2L(DPAK)

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);12.1nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;31.3W/RDS(on);140mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);12.1nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;31.3W/RDS(on);140mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.137nF/Output Capacitance(Coss);76pF


    P-Channel 60V 10A 31.3W TO-252-2L(DPAK)

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