HXY MOSFET-Single FETs, MOSFETs-HSTD35NF06LT4

Description

Drain to Source Voltage;60V/Gate Charge(Qg);36nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;87.7W/RDS(on);17mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.498nF/Output Capacitance(Coss);185pF


N-Channel 60V 50A 87.7W TO-252-2L(DPAK)

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);36nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;87.7W/RDS(on);17mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

$2.34 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);36nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;87.7W/RDS(on);17mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.498nF/Output Capacitance(Coss);185pF


    N-Channel 60V 50A 87.7W TO-252-2L(DPAK)

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