HXY MOSFET-Single FETs, MOSFETs-HXY3419DF

Description

Drain to Source Voltage;30V/Gate Charge(Qg);24nC/Number;1 P-Channel/Pd - Power Dissipation;3.57W/RDS(on);18mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);158pF/Current - Continuous Drain(Id);32A/Gate Threshold Voltage (Vgs(th));1.95V/Ciss-Input Capacitance;2nF


30V 18mΩ@4.5V 1 P-Channel 3.57W DFN-8L(3x3) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);24nC/Number;1 P-Channel/Pd - Power Dissipation;3.57W/RDS(on);18mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);158pF/Current - Continuous Drain(Id);32A/Gate Threshold Voltage (Vgs(th));1.95V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);24nC/Number;1 P-Channel/Pd - Power Dissipation;3.57W/RDS(on);18mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);158pF/Current - Continuous Drain(Id);32A/Gate Threshold Voltage (Vgs(th));1.95V/Ciss-Input Capacitance;2nF


    30V 18mΩ@4.5V 1 P-Channel 3.57W DFN-8L(3x3) Single FETs, MOSFETs RoHS

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