HXY MOSFET-TVS Diodes-SMDJ33A

Description

/Clamping Voltage;53.3V/Reverse Leakage Current (Ir);2uA/Peak Pulse Power Dissipation (Ppp);3kW@10/1000us/Reverse Stand-Off Voltage (Vrwm);33V/Voltage - Breakdown;40.6V/Operating temperature;-65℃~+150℃/Number of Channels;1


53.3V 3kW@10/1000us 40.6V 33V SMC TVS Diodes RoHS

Product form

/Clamping Voltage;53.3V/Reverse Leakage Current (Ir);2uA/Peak Pulse Power Dissipation (Ppp);3kW@10/1000us/Reverse Stand-Off Voltage (Vrwm);33V/Voltage - Breakdown;40.6V/Operating temperature;-65℃~+150℃/Number of Channels;153.3V 3kW@10/1000us 40.6V 33V... Read more

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    Description

    /Clamping Voltage;53.3V/Reverse Leakage Current (Ir);2uA/Peak Pulse Power Dissipation (Ppp);3kW@10/1000us/Reverse Stand-Off Voltage (Vrwm);33V/Voltage - Breakdown;40.6V/Operating temperature;-65℃~+150℃/Number of Channels;1


    53.3V 3kW@10/1000us 40.6V 33V SMC TVS Diodes RoHS

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