Infineon-Single FETs, MOSFETs-BSB012NE2LXI

Description

Drain to Source Voltage;25V/Gate Charge(Qg);62nC@12V/Number;1 N-channel/Pd - Power Dissipation;2.8W/RDS(on);1.2mΩ@10V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);190pF/Current - Continuous Drain(Id);170A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;5.9nF


25V 1.2mΩ@10V 1 N-channel 2.8W MG-WDSON-2 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;25V/Gate Charge(Qg);62nC@12V/Number;1 N-channel/Pd - Power Dissipation;2.8W/RDS(on);1.2mΩ@10V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);190pF/Current - Continuous Drain(Id);170A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

$7.29 Excl. VAT

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    Description

    Drain to Source Voltage;25V/Gate Charge(Qg);62nC@12V/Number;1 N-channel/Pd - Power Dissipation;2.8W/RDS(on);1.2mΩ@10V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);190pF/Current - Continuous Drain(Id);170A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;5.9nF


    25V 1.2mΩ@10V 1 N-channel 2.8W MG-WDSON-2 Single FETs, MOSFETs RoHS

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