Infineon-Single FETs, MOSFETs-BSC009NE2LS5

Description

Drain to Source Voltage;25V/Gate Charge(Qg);28nC/Number;1 N-channel/Pd - Power Dissipation;2.5W/RDS(on);0.9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;3.9nF


N-Channel 25V 100A 2.5W Surface Mount TDSON-8(5x6)

Product form

Drain to Source Voltage;25V/Gate Charge(Qg);28nC/Number;1 N-channel/Pd - Power Dissipation;2.5W/RDS(on);0.9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;25V/Gate Charge(Qg);28nC/Number;1 N-channel/Pd - Power Dissipation;2.5W/RDS(on);0.9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;3.9nF


    N-Channel 25V 100A 2.5W Surface Mount TDSON-8(5x6)

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