Infineon-Single FETs, MOSFETs-BSC084P03NS3E G

Description

Drain to Source Voltage;30V/Gate Charge(Qg);57.7nC@10V/Number;1 P-Channel/Pd - Power Dissipation;69W/RDS(on);8.4mΩ@6V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);160pF/Current - Continuous Drain(Id);78.6A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;4.24nF


30V 8.4mΩ@6V 1 P-Channel 69W TDSON-8-EP(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);57.7nC@10V/Number;1 P-Channel/Pd - Power Dissipation;69W/RDS(on);8.4mΩ@6V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);160pF/Current - Continuous Drain(Id);78.6A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);57.7nC@10V/Number;1 P-Channel/Pd - Power Dissipation;69W/RDS(on);8.4mΩ@6V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);160pF/Current - Continuous Drain(Id);78.6A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;4.24nF


    30V 8.4mΩ@6V 1 P-Channel 69W TDSON-8-EP(5x6) Single FETs, MOSFETs RoHS

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