Infineon-Single FETs, MOSFETs-BSC882N03MSG

Description

Drain to Source Voltage;34V/Gate Charge(Qg);55nC@10V/Number;1 N-channel/Pd - Power Dissipation;69W/RDS(on);3.3mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);88pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;4.3nF/Output Capacitance(Coss);1.2nF


34V 3.3mΩ@4.5V 1 N-channel 69W TSDSON-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;34V/Gate Charge(Qg);55nC@10V/Number;1 N-channel/Pd - Power Dissipation;69W/RDS(on);3.3mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);88pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;34V/Gate Charge(Qg);55nC@10V/Number;1 N-channel/Pd - Power Dissipation;69W/RDS(on);3.3mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);88pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;4.3nF/Output Capacitance(Coss);1.2nF


    34V 3.3mΩ@4.5V 1 N-channel 69W TSDSON-8 Single FETs, MOSFETs RoHS

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