Infineon-Single FETs, MOSFETs-BSO612CV G

Description

Drain to Source Voltage;60V/Gate Charge(Qg);15.5nC@10V;16nC@10V/Number;1 N-Channel + 1 P-Channel/Pd - Power Dissipation;2W/RDS(on);120mΩ@10V;300mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3A;2A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;340pF;400pF


60V 1 N-Channel + 1 P-Channel 2W SOIC-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);15.5nC@10V;16nC@10V/Number;1 N-Channel + 1 P-Channel/Pd - Power Dissipation;2W/RDS(on);120mΩ@10V;300mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3A;2A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

$2.67 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);15.5nC@10V;16nC@10V/Number;1 N-Channel + 1 P-Channel/Pd - Power Dissipation;2W/RDS(on);120mΩ@10V;300mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3A;2A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;340pF;400pF


    60V 1 N-Channel + 1 P-Channel 2W SOIC-8 Single FETs, MOSFETs RoHS

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