Infineon-Single FETs, MOSFETs-BSP316PH6327XTSA1

Description

Drain to Source Voltage;100V/Gate Charge(Qg);6.4nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.8W/RDS(on);1.8Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);680mA/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;146pF


P-Channel 100V 0.68A 1.8W Surface Mount SOT-223

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);6.4nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.8W/RDS(on);1.8Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);680mA/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);6.4nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.8W/RDS(on);1.8Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);680mA/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;146pF


    P-Channel 100V 0.68A 1.8W Surface Mount SOT-223

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