Infineon-Single FETs, MOSFETs-BSP716NH6327

Description

Drain to Source Voltage;75V/Gate Charge(Qg);13.1nC@10V/Number;2 N-Channel/Pd - Power Dissipation;1.8W/RDS(on);160mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);29pF/Current - Continuous Drain(Id);2.3A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;315pF


N-Channel Array 75V 2.3A 1.8W Surface Mount SOT-223

Product form

Drain to Source Voltage;75V/Gate Charge(Qg);13.1nC@10V/Number;2 N-Channel/Pd - Power Dissipation;1.8W/RDS(on);160mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);29pF/Current - Continuous Drain(Id);2.3A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;75V/Gate Charge(Qg);13.1nC@10V/Number;2 N-Channel/Pd - Power Dissipation;1.8W/RDS(on);160mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);29pF/Current - Continuous Drain(Id);2.3A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;315pF


    N-Channel Array 75V 2.3A 1.8W Surface Mount SOT-223

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