Infineon-Single FETs, MOSFETs-BSS138NH6433

Description

Drain to Source Voltage;60V/Gate Charge(Qg);1nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;360mW/RDS(on);3.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.8pF/Current - Continuous Drain(Id);230mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;32pF/Output Capacitance(Coss);7.2pF


N-Channel 60V 0.36W Surface Mount SOT-23-3

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);1nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;360mW/RDS(on);3.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.8pF/Current - Continuous Drain(Id);230mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);1nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;360mW/RDS(on);3.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.8pF/Current - Continuous Drain(Id);230mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;32pF/Output Capacitance(Coss);7.2pF


    N-Channel 60V 0.36W Surface Mount SOT-23-3

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