Infineon-Single FETs, MOSFETs-BSZ0502NSI

Description

Drain to Source Voltage;30V/Number;1 N-channel/Pd - Power Dissipation;43W/RDS(on);2.4mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);44pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.2nF


30V 2.4mΩ@10V 1 N-channel 43W TSDSON-8(3.3x3.3) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Number;1 N-channel/Pd - Power Dissipation;43W/RDS(on);2.4mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);44pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.2nF30V... Read more

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    Description

    Drain to Source Voltage;30V/Number;1 N-channel/Pd - Power Dissipation;43W/RDS(on);2.4mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);44pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.2nF


    30V 2.4mΩ@10V 1 N-channel 43W TSDSON-8(3.3x3.3) Single FETs, MOSFETs RoHS

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