Infineon-Single FETs, MOSFETs-BSZ058N03LS G

Description

Drain to Source Voltage;30V/Number;1 N-channel/Pd - Power Dissipation;45W/RDS(on);4.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);36pF/Current - Continuous Drain(Id);71A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;1.8nF


30V 4.8mΩ@10V 1 N-channel 45W DFN-8(3.3x3.3) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Number;1 N-channel/Pd - Power Dissipation;45W/RDS(on);4.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);36pF/Current - Continuous Drain(Id);71A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;1.8nF30V... Read more

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    Description

    Drain to Source Voltage;30V/Number;1 N-channel/Pd - Power Dissipation;45W/RDS(on);4.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);36pF/Current - Continuous Drain(Id);71A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;1.8nF


    30V 4.8mΩ@10V 1 N-channel 45W DFN-8(3.3x3.3) Single FETs, MOSFETs RoHS

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