Infineon-Single FETs, MOSFETs-BSZ068N06NSATMA1

Description

Drain to Source Voltage;60V/Gate Charge(Qg);21nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;46W/RDS(on);6.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);38pF/Current - Continuous Drain(Id);63A/Gate Threshold Voltage (Vgs(th));3.3V/Ciss-Input Capacitance;1.5nF/Output Capacitance(Coss);375pF


60V 6.8mΩ@10V 1 N-channel 46W TSDSON-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);21nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;46W/RDS(on);6.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);38pF/Current - Continuous Drain(Id);63A/Gate Threshold Voltage (Vgs(th));3.3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);21nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;46W/RDS(on);6.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);38pF/Current - Continuous Drain(Id);63A/Gate Threshold Voltage (Vgs(th));3.3V/Ciss-Input Capacitance;1.5nF/Output Capacitance(Coss);375pF


    60V 6.8mΩ@10V 1 N-channel 46W TSDSON-8 Single FETs, MOSFETs RoHS

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