Infineon-Single FETs, MOSFETs-BUZ100S

Description

Drain to Source Voltage;55V/Gate Charge(Qg);100nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;170W/RDS(on);15mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);390pF/Current - Continuous Drain(Id);77A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.375nF/Output Capacitance(Coss);770pF


55V 15mΩ@10V 1 N-channel 170W TO-220 Single FETs, MOSFETs

Product form

Drain to Source Voltage;55V/Gate Charge(Qg);100nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;170W/RDS(on);15mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);390pF/Current - Continuous Drain(Id);77A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;55V/Gate Charge(Qg);100nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;170W/RDS(on);15mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);390pF/Current - Continuous Drain(Id);77A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.375nF/Output Capacitance(Coss);770pF


    55V 15mΩ@10V 1 N-channel 170W TO-220 Single FETs, MOSFETs

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