Infineon-Single FETs, MOSFETs-BUZ102SL

Description

Drain to Source Voltage;55V/Gate Charge(Qg);90nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;120W/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);290pF/Current - Continuous Drain(Id);47A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.73nF/Output Capacitance(Coss);515pF


55V 1 N-channel 120W TO-220AB Single FETs, MOSFETs

Product form

Drain to Source Voltage;55V/Gate Charge(Qg);90nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;120W/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);290pF/Current - Continuous Drain(Id);47A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;55V/Gate Charge(Qg);90nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;120W/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);290pF/Current - Continuous Drain(Id);47A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.73nF/Output Capacitance(Coss);515pF


    55V 1 N-channel 120W TO-220AB Single FETs, MOSFETs

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