Infineon-Single FETs, MOSFETs-BUZ111SL-E3045A

Description

Drain to Source Voltage;55V/Gate Charge(Qg);232nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;300W/RDS(on);10mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);715pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;4.8nF/Output Capacitance(Coss);1.357nF


55V 10mΩ@4.5V 1 N-channel 300W TO-263 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;55V/Gate Charge(Qg);232nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;300W/RDS(on);10mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);715pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;55V/Gate Charge(Qg);232nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;300W/RDS(on);10mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);715pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;4.8nF/Output Capacitance(Coss);1.357nF


    55V 10mΩ@4.5V 1 N-channel 300W TO-263 Single FETs, MOSFETs RoHS

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