Infineon-Single FETs, MOSFETs-IAUC80N04S6L032

Description

Drain to Source Voltage;40V/Gate Charge(Qg);25nC@10V/Number;1 N-channel/Pd - Power Dissipation;50W/RDS(on);3.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);35pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;1.515nF


40V 3.2mΩ@10V 1 N-channel 50W TDSON-8(6.2x5.2) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);25nC@10V/Number;1 N-channel/Pd - Power Dissipation;50W/RDS(on);3.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);35pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);25nC@10V/Number;1 N-channel/Pd - Power Dissipation;50W/RDS(on);3.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);35pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;1.515nF


    40V 3.2mΩ@10V 1 N-channel 50W TDSON-8(6.2x5.2) Single FETs, MOSFETs RoHS

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