Infineon-Single FETs, MOSFETs-IGLD65R080D2AUMA1

Description

Drain to Source Voltage;650V/Gate Charge(Qg);3.3nC/Pd - Power Dissipation;68W/RDS(on);80mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.54pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;240pF/Output Capacitance(Coss);40pF


650V 80mΩ 68W PG-LSON-8 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;650V/Gate Charge(Qg);3.3nC/Pd - Power Dissipation;68W/RDS(on);80mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.54pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;240pF/Output... Read more

$17.04 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);3.3nC/Pd - Power Dissipation;68W/RDS(on);80mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.54pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;240pF/Output Capacitance(Coss);40pF


    650V 80mΩ 68W PG-LSON-8 Single FETs, MOSFETs RoHS

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