Infineon-Single FETs, MOSFETs-IGLT65R045D2ATMA1

Description

Drain to Source Voltage;650V/Gate Charge(Qg);6nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;124W/RDS(on);45mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.98pF/Current - Continuous Drain(Id);38A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;430pF/Output Capacitance(Coss);72pF


650V 45mΩ 1 N-channel 124W HDSOP-16 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;650V/Gate Charge(Qg);6nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;124W/RDS(on);45mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.98pF/Current - Continuous Drain(Id);38A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

$27.03 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);6nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;124W/RDS(on);45mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.98pF/Current - Continuous Drain(Id);38A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;430pF/Output Capacitance(Coss);72pF


    650V 45mΩ 1 N-channel 124W HDSOP-16 Single FETs, MOSFETs RoHS

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