Infineon-Single FETs, MOSFETs-IPA60R460CE

Description

Drain to Source Voltage;650V/Gate Charge(Qg);28nC@10V/Number;1 N-channel/Pd - Power Dissipation;30W/RDS(on);460mΩ@10V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);121pF/Current - Continuous Drain(Id);13.1A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;620pF


650V 13.1A 30W Through Hole TO-220FP

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);28nC@10V/Number;1 N-channel/Pd - Power Dissipation;30W/RDS(on);460mΩ@10V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);121pF/Current - Continuous Drain(Id);13.1A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);28nC@10V/Number;1 N-channel/Pd - Power Dissipation;30W/RDS(on);460mΩ@10V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);121pF/Current - Continuous Drain(Id);13.1A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;620pF


    650V 13.1A 30W Through Hole TO-220FP

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