Infineon-Single FETs, MOSFETs-IPA65R095C7

Description

Drain to Source Voltage;650V/Gate Charge(Qg);45nC@400V/Number;1 N-channel/Pd - Power Dissipation;34W/RDS(on);95mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;2.14nF


650V 95mΩ@10V 1 N-channel 34W TO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);45nC@400V/Number;1 N-channel/Pd - Power Dissipation;34W/RDS(on);95mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;2.14nF650V 95mΩ@10V 1... Read more

$17.64 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);45nC@400V/Number;1 N-channel/Pd - Power Dissipation;34W/RDS(on);95mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;2.14nF


    650V 95mΩ@10V 1 N-channel 34W TO-220 Single FETs, MOSFETs RoHS

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