Infineon-Single FETs, MOSFETs-IPA65R280E6

Description

Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;32W/RDS(on);250mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);13.8A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;950pF


650V 250mΩ@10V 1 N-channel 32W TO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;32W/RDS(on);250mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);13.8A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;950pF650V 250mΩ@10V 1 N-channel... Read more

$8.55 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;32W/RDS(on);250mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);13.8A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;950pF


    650V 250mΩ@10V 1 N-channel 32W TO-220 Single FETs, MOSFETs RoHS

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