Infineon-Single FETs, MOSFETs-IPA65R380E6

Description

Drain to Source Voltage;650V/Gate Charge(Qg);39nC@10V/Number;1 N-channel/Pd - Power Dissipation;31W/RDS(on);380mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10.6A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;710pF/Output Capacitance(Coss);41pF


N-Channel 650V Through Hole TO-220FP-3

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);39nC@10V/Number;1 N-channel/Pd - Power Dissipation;31W/RDS(on);380mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10.6A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;710pF/Output Capacitance(Coss);41pFN-Channel 650V... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);39nC@10V/Number;1 N-channel/Pd - Power Dissipation;31W/RDS(on);380mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10.6A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;710pF/Output Capacitance(Coss);41pF


    N-Channel 650V Through Hole TO-220FP-3

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