Infineon-Single FETs, MOSFETs-IPAN65R650CE

Description

Drain to Source Voltage;650V/Gate Charge(Qg);23nC@10V/Number;1 N-channel/Pd - Power Dissipation;86W/RDS(on);650mΩ@10V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);88pF/Current - Continuous Drain(Id);10.1A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;440pF


650V 650mΩ@10V 1 N-channel 86W TO-220FP-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);23nC@10V/Number;1 N-channel/Pd - Power Dissipation;86W/RDS(on);650mΩ@10V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);88pF/Current - Continuous Drain(Id);10.1A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);23nC@10V/Number;1 N-channel/Pd - Power Dissipation;86W/RDS(on);650mΩ@10V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);88pF/Current - Continuous Drain(Id);10.1A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;440pF


    650V 650mΩ@10V 1 N-channel 86W TO-220FP-3 Single FETs, MOSFETs RoHS

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