Infineon-Single FETs, MOSFETs-IPB010N06NATMA1

Description

Drain to Source Voltage;60V/Gate Charge(Qg);243nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;300W/RDS(on);1mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);260pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));3.3V/Ciss-Input Capacitance;18.75nF/Output Capacitance(Coss);4.25nF


N-Channel 60V 180A 300W TO-263-7

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);243nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;300W/RDS(on);1mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);260pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));3.3V/Ciss-Input... Read more

$39.36 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);243nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;300W/RDS(on);1mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);260pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));3.3V/Ciss-Input Capacitance;18.75nF/Output Capacitance(Coss);4.25nF


    N-Channel 60V 180A 300W TO-263-7

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