Infineon-Single FETs, MOSFETs-IPB032N10N5

Description

Drain to Source Voltage;100V/Gate Charge(Qg);76nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;187W/RDS(on);3.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);166A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input Capacitance;6.97nF/Output Capacitance(Coss);829pF


100V 3.2mΩ@10V 1 N-channel 187W TO-263-7 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);76nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;187W/RDS(on);3.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);166A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);76nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;187W/RDS(on);3.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);166A/Gate Threshold Voltage (Vgs(th));3.8V/Ciss-Input Capacitance;6.97nF/Output Capacitance(Coss);829pF


    100V 3.2mΩ@10V 1 N-channel 187W TO-263-7 Single FETs, MOSFETs RoHS

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