Infineon-Single FETs, MOSFETs-IPB067N08N3 G

Description

Drain to Source Voltage;80V/Number;1 N-channel/Pd - Power Dissipation;136W/RDS(on);6.7mΩ@10V/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));3.5V


80V 6.7mΩ@10V 1 N-channel 136W TO-263-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;80V/Number;1 N-channel/Pd - Power Dissipation;136W/RDS(on);6.7mΩ@10V/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));3.5V80V 6.7mΩ@10V 1 N-channel 136W TO-263-3 Single... Read more

$8.70 Excl. VAT

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    Description

    Drain to Source Voltage;80V/Number;1 N-channel/Pd - Power Dissipation;136W/RDS(on);6.7mΩ@10V/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));3.5V


    80V 6.7mΩ@10V 1 N-channel 136W TO-263-3 Single FETs, MOSFETs RoHS

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