Infineon-Single FETs, MOSFETs-IPB100N04S2L-03

Description

Drain to Source Voltage;40V/Gate Charge(Qg);163nC@10V/Number;1 N-channel/Pd - Power Dissipation;300W/RDS(on);2.4mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);700pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;6nF


40V 2.4mΩ@10V 1 N-channel 300W TO-263-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);163nC@10V/Number;1 N-channel/Pd - Power Dissipation;300W/RDS(on);2.4mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);700pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);163nC@10V/Number;1 N-channel/Pd - Power Dissipation;300W/RDS(on);2.4mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);700pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;6nF


    40V 2.4mΩ@10V 1 N-channel 300W TO-263-3 Single FETs, MOSFETs RoHS

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