Infineon-Single FETs, MOSFETs-IPB100N08S2-07

Description

Drain to Source Voltage;75V/Number;1 N-channel/Pd - Power Dissipation;300W/RDS(on);6.8mΩ@10V/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V


75V 6.8mΩ@10V 1 N-channel 300W TO-263-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;75V/Number;1 N-channel/Pd - Power Dissipation;300W/RDS(on);6.8mΩ@10V/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V75V 6.8mΩ@10V 1 N-channel 300W TO-263-3 Single... Read more

$12.39 Excl. VAT

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    Description

    Drain to Source Voltage;75V/Number;1 N-channel/Pd - Power Dissipation;300W/RDS(on);6.8mΩ@10V/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V


    75V 6.8mΩ@10V 1 N-channel 300W TO-263-3 Single FETs, MOSFETs RoHS

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