Infineon-Single FETs, MOSFETs-IPB180N10S402ATMA1

Description

Drain to Source Voltage;100V/Gate Charge(Qg);200nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;300W/RDS(on);2.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);460pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;14.6nF/Output Capacitance(Coss);4.76nF


N-Channel 100V 180A 300W Surface Mount TO-263-7-3

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);200nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;300W/RDS(on);2.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);460pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input... Read more

$35.10 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);200nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;300W/RDS(on);2.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);460pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;14.6nF/Output Capacitance(Coss);4.76nF


    N-Channel 100V 180A 300W Surface Mount TO-263-7-3

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