Infineon-Single FETs, MOSFETs-IPB35N10S3L26ATMA1

Description

Drain to Source Voltage;100V/Gate Charge(Qg);39nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;71W/RDS(on);26.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input Capacitance;2.7nF/Output Capacitance(Coss);600pF


100V 26.3mΩ@10V 1 N-channel 71W TO-263-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);39nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;71W/RDS(on);26.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);39nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;71W/RDS(on);26.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input Capacitance;2.7nF/Output Capacitance(Coss);600pF


    100V 26.3mΩ@10V 1 N-channel 71W TO-263-3 Single FETs, MOSFETs RoHS

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