Infineon-Single FETs, MOSFETs-IPB60R099CP

Description

Drain to Source Voltage;650V/Gate Charge(Qg);60nC@10V/Number;1 N-channel/Pd - Power Dissipation;255W/RDS(on);99mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);340pF/Current - Continuous Drain(Id);31A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;2.8nF


650V 99mΩ@10V 1 N-channel 255W TO-263-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);60nC@10V/Number;1 N-channel/Pd - Power Dissipation;255W/RDS(on);99mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);340pF/Current - Continuous Drain(Id);31A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

$21.60 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);60nC@10V/Number;1 N-channel/Pd - Power Dissipation;255W/RDS(on);99mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);340pF/Current - Continuous Drain(Id);31A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;2.8nF


    650V 99mΩ@10V 1 N-channel 255W TO-263-3 Single FETs, MOSFETs RoHS

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