Infineon-Single FETs, MOSFETs-IPB60R125C6

Description

Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;219W/RDS(on);110mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;2.127nF


650V 110mΩ@10V 1 N-channel 219W TO-263-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;219W/RDS(on);110mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;2.127nF650V 110mΩ@10V 1 N-channel... Read more

$16.98 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;219W/RDS(on);110mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;2.127nF


    650V 110mΩ@10V 1 N-channel 219W TO-263-3 Single FETs, MOSFETs RoHS

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