Infineon-Single FETs, MOSFETs-IPB60R160C6

Description

Drain to Source Voltage;600V/Number;1 N-channel/Pd - Power Dissipation;176W/RDS(on);160mΩ@10V/Current - Continuous Drain(Id);23.8A/Gate Threshold Voltage (Vgs(th));3.5V


600V 160mΩ@10V 1 N-channel 176W TO-263-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Number;1 N-channel/Pd - Power Dissipation;176W/RDS(on);160mΩ@10V/Current - Continuous Drain(Id);23.8A/Gate Threshold Voltage (Vgs(th));3.5V600V 160mΩ@10V 1 N-channel 176W TO-263-3 Single... Read more

$1.44 Excl. VAT

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    Description

    Drain to Source Voltage;600V/Number;1 N-channel/Pd - Power Dissipation;176W/RDS(on);160mΩ@10V/Current - Continuous Drain(Id);23.8A/Gate Threshold Voltage (Vgs(th));3.5V


    600V 160mΩ@10V 1 N-channel 176W TO-263-3 Single FETs, MOSFETs RoHS

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