Infineon-Single FETs, MOSFETs-IPB60R199CP

Description

Drain to Source Voltage;650V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Pd - Power Dissipation;139W/RDS(on);199mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);180pF/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.52nF


650V 199mΩ@10V 1 N-channel 139W TO-263 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Pd - Power Dissipation;139W/RDS(on);199mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);180pF/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Pd - Power Dissipation;139W/RDS(on);199mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);180pF/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.52nF


    650V 199mΩ@10V 1 N-channel 139W TO-263 Single FETs, MOSFETs RoHS

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